p-channel logic level enhancement mode field effect transistor aug.20,2006 samhop microelectronics corp. product summary v dss i d r ds(on) ( m ) max -10a 45 @ v gs = -10v 60 @ v gs = -4.5v features -40v stu/d421s to-252 and to-251 package. super high dense cell design for low r ds(on ). rugged and reliable. stu series to-252aa(d-pak) std series to-251(l-pak) g g g g s s s s d d d d s g d parameter symbol unit drain-source voltage v ds v gate-source voltage v gs v drain current-continuous @ta -pulsed i d 50 a a a w i dm drain-source diode forward current i s maximum power dissipation p d operating junction and storage temperature range t j ,t stg -55 to 175 c a a a b -40 -10 20 -10 -50 25 c 70 c ta= 25 c ta=70 c 35 -8.3 a limit thermal characteristics thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc 3 50 r ja /w c /w c absolute maximum ratings (t a =25 c unless otherwise noted) green product
= parameter symbol condition min typ max unit off characteristics drain-s ource breakdown voltage bv ds s = v gs 0v, i d -250ua = -40 v zero g ate voltage drain c urrent i ds s v ds -32v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 100 na on char acte r is tics b g ate t hreshold voltage v gs(th) v ds v gs ,i d =-250ua = -1.0 -3.0 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs -10v, i d -10a v gs -4.5v, i d -6a 60 on-state drain current i d(on) v ds =-5v, v gs =-10v a s f orward trans conductance fs g v ds -10v, i d -10a dynamic characteristics c input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =-20v, v gs =0v f=1.0mh z p f p f p f s witc hing c har ac te r is tic s c turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = -24v i d =-10a v gs = -10v r gen =3.3ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-24v, i d =-16a v gs =-10v nc nc nc c fall time = = = = == 2 5 45 ua mohm mohm p-channel electrical characteristics (t a 25 c unles s otherwis e noted) vds =-24v, id =-10a,vgs =-10v nc vds =-24v, id =-10a,vgs =-4.5v 30 85 135 900 17 26 45 15 12 5 1.8 8 11 ohm rg gate resistance v gs =0v, v ds = 0v, f=1.0mh z 3.5 s tu/d421s -1.7 34 47
parameter symbol c ondition min typ max unit e le ctr ical char acte r is tics (t a =25 c unles s otherwis e noted) dr ain-s our ce diode char acte r is tics diode f orward voltage v sd v gs = 0v, is = -10a -1.3 v a notes b.guaranteed by design, not subject to production testing. a.pulse test:pulse width 300us, duty cycle 2%. figure 2. transfer characteristics f igure 4. o n-r es is tance variation with drain current and temperature i d , drain c urrent (a) v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance i d , drain c urrent (a) 3 r ds (on) , normalized s tu/d421s 120 100 80 60 40 20 1 20 16 12 8 0 0 0.6 1.8 2.4 3.2 4.0 4.8 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 125 -0.91 tj( c) 100 25 50 t j, j unction t emperature ( c ) f igure 3. o n-r es is tance vs . drain c urrent and gate voltage 6121824 30 1 v gs =-10v v gs =-4.5v v gs =-10v i d =-10a 4 tj=125 c -55 c 150 v gs =-4.5v i d =-6a figure 1. output characteristics -v ds , drain-to-s ource voltage (v ) -i d ,draincurrent(a) 30 24 18 12 6 0 0 0.5 1.5 2 2.5 3 v gs =-10v v gs =-3.5v v gs =-4.5v v gs =-8v v gs =-3v 25 c 75 1
s tu/d421s f igure 6. b reakdown v oltage v ariation with t emperature vth, normalized g ate-s ource t hres hold v oltage bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) figure 8. body diode forward voltage v ariation with s ource c urrent v sd , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) tj, junction temperature ( c) 4 6 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.27 1.18 1.09 1.00 0.91 0.82 0.73 i d =-250ua v gs , gate-s ource voltage (v) r ds (on) ( m ) 180 150 120 90 60 30 0 f igure 7. o n-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature 125 c 25 c 75 c 125 c i d =-10a 5.0 75 c 25 c
s tu/d421s 6 v gs ,gatetosourcevoltage(v) figure 10. gate charge qg, total gate charge (nc) 10 8 6 4 2 0 036 9 12 16 18 21 24 v ds =-24v i d =-10a figure 9. capacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 ciss coss crss f igure 11.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 5 figure 12. maximum safe operating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 60 10 1 0.1 0.03 0.1 1 10 30 50 v gs =-10v single pulse t a =25 c r d s (on) limi t 10ms 100 m s 1 s dc 100 10 1 1 610 60100 60 600 300 600 vds=-24v,id=-10a vgs=-10v tr tf td(on) td(off) transient thermal impedance square wave pulse duration (sec) f igure 13. normalized t hermal t ransient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r e ja (t)=r (t) * r e ja 2. r e ja =s ee datasheet 3. t jm- t a =p dm *r e ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
6 stu/d421s to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d421s 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to251 tube/to-252 to-252 carrier tape to-252 reel tape and reel data unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 2 0.1 10.3 2 0.1 2.50 2 0.1 ? 2 ? 1.5 + 0.1 -0 16.0 0.3 2 1.75 0.1 2 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 s 8 "a" to-251 tube s tu/d421s
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